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| NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, with 3.7 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com MOSFET V(BR)DSS 20 V RDS(on) TYP 60 mW @ 4.5 V 80 mW @ 2.5 V ID MAX 3.9 A * * * * * Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP-6 Package with Better Thermals Super Low Gate Charge MOSFET Ultra Low VF Schottky Pb-Free Package is Available Applications * Fast Switching, low Gate Charge for Dc to Dc Buck and Boost * Li-Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media * Players Load Side Switching Converters SCHOTTKY DIODE VR MAX 20 V D1 VF TYP 0.35 V A IF MAX 3.7 A MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Steady State tv5s Pulsed Drain Current Power Dissipation TJ = 25C TJ = 85C TJ = 25C IDM PD Symbol VDSS VGS ID Value 20 12 2.9 2.1 3.9 12 0.91 0.36 2.1 IS TJ, TSTG TL 2.6 -55 to 150 260 A C C S G Value 20 20 2.2 3.7 Unit V V A A 3 4 5 A A A W Unit V V A S1 N-Channel MOSFET C SCHOTTKY DIODE ChipFET] CASE 1206A STYLE 3 G1 tp=10 ms Steady State tv5s TJ = 25C TJ = 85C TJ = 25C PIN CONNECTIONS 1 2 8 7 6 C C D D 1 2 3 4 MARKING DIAGRAM Continuous Source Current (Body Diode) Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C2 M SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Steady State tv5s Symbol VRRM VR IF 25 C TJ = 25C C2 = Specific Device Code M = Month Code ORDERING INFORMATION Device NTHD4N02FT1 NTHD4N02FT1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHD4N02F/D (c) Semiconductor Components Industries, LLC, 2004 1 October, 2004 - Rev. 7 NTHD4N02F THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s 1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq. [1 oz] including traces). Symbol RqJA RqJA Max 110 60 Unit C/W C/W MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = 250 mA VGS = 0 V VDS = 16 V TJ = 25C TJ = 85C 20 28 1.0 5.0 "100 nA V mA Symbol Test Conditions Min Typ Max Units Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On-Resistance IGSS VDS = 0 V, VGS = "12 V VGS = VDS, ID = 250 mA VGS = 4.5, ID = 2.9 A VGS = 2.5, ID = 2.3 A VGS(TH) RDS(on) () 0.6 0.058 0.077 6.0 1.2 0.080 0.115 V W Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VDS = 10 V, ID = 2.9 A S CISS COSS CRSS QG(TOT) QGS QGD VGS = 4 5 V VDS = 10 V 4.5 V, V, ID = 2.9 A VGS = 0 V, f = 1.0 MHz, V 1 0 MH VDS = 10 V 180 80 30 2.6 0.6 0.7 300 130 50 4.0 pF nC td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 16 V, ID = 2.9 A, RG = 2.5 W 5.0 9.0 10 3.0 10 18 20 6.0 ns DRAIN-SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = 2.6 A, dIS/dt = 100 A/ms VGS = 0 V, IS = 2.6 A 0.8 12.5 9.0 3.5 6.0 nC 1.15 V ns SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 1.0 A Maximum Instantaneous Reverse Current IR VR = 10 V VR = 20 V Non-Repetitive Peak Surge Current IFSM Halfwave, Single Pulse, 60 Hz Min Typ Max 0.31 0.365 0.75 2.5 23 A mA Units V 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHD4N02F TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 8 ID, DRAIN CURRENT (AMPS) VGS = 5 V to 3 V VGS = 2.4 V 6 2.2 V 2V 8 TJ = 25C ID, DRAIN CURRENT (AMPS) 6 VDS 10 V 4 1.8 V 4 2 1.6 V 1.4 V 2 TC = -55C 25C 100C 3 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 0.5 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 ID = 2.9 A TJ = 25C 0.1 0.1 Figure 2. Transfer Characteristics TJ = 25C VGS = 2.5 V 0.07 VGS = 4.5 V 0.05 0 0 3 5 2 4 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 0.04 1 3 5 7 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 2.9 A VGS = 4.5 V 1.5 IDSS, LEAKAGE (nA) 100 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.3 TJ = 100C 10 1.1 0.9 0.7 -50 1 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHD4N02F TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 400 CISS C, CAPACITANCE (pF) 300 CRSS 200 5 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C 4.5 4 QT 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS = 0 V VGS = 0 V 3.5 3 ID = 2.9 A TJ = 25C 12 2.5 2 QGS QGD 8 1.5 1 100 COSS 4 0.5 0 0 0.5 1 1.5 2 2.5 3 QG, TOTAL GATE CHARGE (nC) 0 0 10 5 VGS 0 VDS 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.9 A VGS = 4.5 V t, TIME (ns) 7 6 5 4 3 2 1 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 tr td(off) td(on) tf 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.3 0.45 0.6 0.75 0.9 1.05 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTHD4N02F TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 TJ = 150C 1 TJ = 150C TJ = 25C TJ = -55C 0.20 0.40 0.60 0.80 TJ = 25C 0.20 0.40 0.60 0.80 0.1 0.00 0.1 0.00 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 11. Typical Forward Voltage 100E-3 IR, REVERSE CURRENT (AMPS) TJ = 150C 10E-3 IR, MAXIMUM REVERSE CURRENT (AMPS) 100E-3 Figure 12. Maximum Forward Voltage TJ = 150C 10E-3 TJ = 100C TJ = 100C 1E-3 1E-3 100E-6 TJ = 25C 10E-6 0 10 VR, REVERSE VOLTAGE (VOLTS) 100E-6 TJ = 25C 10E-6 0 10 VR, REVERSE VOLTAGE (VOLTS) 20 20 Figure 13. Typical Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 14. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 3.5 freq = 20 kHz 3 2.5 2 1.5 1 0.5 0 25 dc square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 square wave dc 45 65 85 105 125 145 165 TL, LEAD TEMPERATURE (C) Figure 15. Current Derating Figure 16. Forward Power Dissipation http://onsemi.com 5 NTHD4N02F PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE E A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 2.00 1.80 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 L G D J STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. A A S G D D C C C 0.05 (0.002) SOLDER FOOTPRINTS* 2.032 0.08 0.457 0.018 0.635 0.025 2.032 0.08 0.711 0.028 1.092 0.043 0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 0.66 0.026 0.254 0.010 SCALE 20:1 mm inches Basic Style 3 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTHD4N02F/D |
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